PDTA115TE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTA115TE-115 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features internal base resistors, with a specified R1 value of 100 kOhms, simplifying circuit design by eliminating the need for external biasing resistors. The transistor offers a minimum DC current gain (hFE) of 100 at 1 mA collector current and 5 V Vce. Its Vce saturation is characterized at a maximum of 150 mV for 250 µA base current and 5 mA collector current. With a maximum power dissipation of 150 mW, this device is suitable for use in the consumer electronics and industrial automation sectors. The PDTA115TE-115 is supplied in an SC-75 (SOT-416) package on a tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 100 kOhms |
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