PDTA115EK,115
TRANS PREBIAS PNP 50V 0.02A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA115EK-115 is a PNP pre-biased bipolar transistor designed for surface-mount applications within the SMT3 (MPAK) package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. The integrated base resistors are R1 = 100 kOhms and R2 = 100 kOhms, providing a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V Vce. The saturation voltage (Vce(sat)) is a maximum of 150mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 250mW, this transistor is suitable for use in portable electronics, industrial controls, and consumer devices. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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