PDTA115EE,115
TRANS PREBIAS PNP 50V SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTA115EE-115 is a PNP, pre-biased bipolar transistor designed for surface mount applications within the SC-75 (SOT-416) package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 20 mA. It offers a typical Vce saturation of 150mV at 5mA collector current, with an integrated base resistor (R1) of 100 kOhms and a base-emitter resistor (R2) of 100 kOhms. The device maintains a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V Vce, with a collector cutoff current of 1µA. Rated for 150 mW maximum power dissipation, the PDTA115EE-115 is supplied on tape and reel. This transistor is suitable for use in various industrial and consumer electronics applications requiring simple interface circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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