PDTA114YS,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA114YS-126 is a PNP pre-biased bipolar junction transistor (BJT) designed for efficient switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce max) of 50 V and a maximum collector current (Ic) of 100 mA. The integrated base resistors, R1 at 10 kOhms and R2 at 47 kOhms, simplify circuit design by eliminating the need for external biasing components, offering a typical DC current gain (hFE) of 100 at 5 mA collector current and 5 V collector-emitter voltage. With a maximum power dissipation of 500 mW, it is suitable for power-sensitive circuits. The transistor exhibits a low saturation voltage of 100 mV at 250 µA base current and 5 mA collector current. Packaged in a TO-92-3 through-hole configuration, it is supplied in Tape & Box (TB) packaging. This device finds application in various sectors, including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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