PDTA114YK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PNP Pre-Biased Transistor, PDTA114YK-115. This PNP BJT features integrated base resistors (R1 = 10 kOhms, R2 = 47 kOhms), simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce. With a maximum power dissipation of 250 mW and a Vce(sat) of 100mV at 250µA base current and 5mA collector current, it is suitable for low-power switching and amplification applications. Packaged in SMT3 (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel, this component is commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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