PDTA114YE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA114YE-115 is a PNP pre-biased bipolar transistor. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1 = 10 kOhms, R2 = 47 kOhms) for simplified circuit design. The transistor type is PNP with a pre-biased configuration, providing a typical DC current gain (hFE) of 100 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 100mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 150mW, this component is supplied in an SC-75 (SOT-416) surface mount package, delivered on tape and reel. Applications include general-purpose switching and amplification in consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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