PDTA114TS,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA114TS-126 is a PNP pre-biased bipolar transistor offering a collector-emitter breakdown voltage of 50 V. This component features a maximum collector current of 100 mA and a power dissipation of 500 mW. The integrated base resistor (R1) is 10 kOhms, contributing to a minimum DC current gain (hFE) of 200 at 1mA and 5V. Saturation voltage (Vce Sat) is specified as a maximum of 150mV at 500µA collector current and 10mA base current. The device is packaged in a TO-92-3 (TO-226-3) through-hole style, supplied in Tape & Box packaging. This component is commonly utilized in industrial, automotive, and consumer electronics applications for switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 10 kOhms |
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