PDTA114TEF,115
TRANS PREBIAS PNP 50V 0.1A SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA114TEF-115 is a PNP - Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. The transistor offers a minimum DC current gain (hFE) of 200 at 1 mA collector current and 5 V Vce. It is packaged in an SC-89 (SOT-490) case and delivered on tape and reel. The internal base resistor (R1) is specified at 10 kOhms. This device is suitable for applications requiring simplified circuit design, often found in consumer electronics and industrial control systems. The maximum power dissipation is 150 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
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