PDTA114EEAF
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA114EEAF is a PNP pre-biased bipolar transistor designed for general-purpose switching and amplification. This component features integrated base resistors, simplifying circuit design and reducing component count. It operates with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor offers a minimum DC current gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 180 MHz. Power dissipation is rated at 150 mW. The PDTA114EEAF is housed in an SC-75 (SOT-416) surface-mount package, supplied on tape and reel. Typical applications include digital logic level shifting and interface circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 180 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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