PDTA113EK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. presents the PDTA113EK-115, a PNP pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With integrated base resistors (R1 and R2) of 1 kOhms each, it simplifies circuit design. The device offers a minimum DC current gain (hFE) of 30 at 40mA and 5V, and a Vce saturation of 150mV at 1.5mA collector current. The maximum power dissipation is 250mW. This transistor is supplied in an SMT3 MPAK package, suitable for surface mounting and delivered on tape and reel. It is commonly employed in industrial and consumer electronics applications requiring low-power switching and signal amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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