PDTA113EE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA113EE-115 is a PNP, pre-biased bipolar junction transistor designed for surface mount applications. This component, packaged in an SC-75 (SOT-416) case, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features integrated base resistors (R1 = 1 kOhm, R2 = 1 kOhm) for simplified circuit design, minimizing external component count. The transistor exhibits a minimum DC current gain (hFE) of 30 at 40 mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 150 mW. This device is suitable for use in general-purpose switching and amplification circuits, commonly found in industrial automation, consumer electronics, and medical equipment. The device is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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