PBRN123ES,126
TRANS PREBIAS NPN 40V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. offers the PBRN123ES-126, a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 800mA. The device has a maximum power dissipation of 700mW and a saturation voltage of 1.15V at 8mA collector current and 800mA collector current. The DC current gain (hFE) is a minimum of 280 at 300mA collector current and 5V collector-emitter voltage. Integrated base resistors of 2.2 kOhms (R1) and 2.2 kOhms (R2) are included, simplifying circuit design. The PBRN123ES-126 is supplied in a TO-92-3 through-hole package and is available in Tape & Box packaging. This transistor is suitable for applications in industrial automation, consumer electronics, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 300mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 700 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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