PBRN123EK,115
TRANS PREBIAS NPN 40V 0.6A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PBRN123EK-115 is an NPN pre-biased bipolar transistor. This SMT3 packaged device features a 40V collector-emitter breakdown voltage and a maximum collector current of 600mA. It offers a minimum DC current gain (hFE) of 280 at 300mA and 5V. The internal base resistors are specified as R1 = 2.2 kOhms and R2 = 2.2 kOhms. The maximum power dissipation is 250mW. This component is commonly utilized in consumer electronics and industrial applications. The package type is TO-236-3, SC-59, SOT-23-3, supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 300mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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