PBRN113ZS,126
TRANS PREBIAS NPN 40V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. NPN - Pre-Biased Transistor, part number PBRN113ZS-126. This through-hole component features a 40 V collector-emitter breakdown voltage and a maximum collector current of 800 mA. The integrated base resistors are 1 kOhms (R1) and 10 kOhms (R2) for emitter-base bias. With a maximum power dissipation of 700 mW and a Vce saturation of 1.15V @ 8mA, 800mA, this transistor is suitable for applications requiring simplified discrete logic functions. It is supplied in a TO-92-3 package, presented in Tape & Box (TB) packaging for high-volume assembly. The component offers a minimum DC current gain (hFE) of 500 at 300 mA and 5 V. Typical industries utilizing this type of component include industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 300mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 700 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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