PBRN113ES,126
TRANS PREBIAS NPN 40V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PBRN113ES-126 is a pre-biased NPN bipolar transistor designed for through-hole mounting in a TO-92-3 package. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 800mA. It offers a minimum DC current gain (hFE) of 180 at 300mA collector current and 5V collector-emitter voltage. The transistor is supplied in Tape & Box (TB) packaging. Typical applications include general-purpose switching and amplification circuits across various industrial and consumer electronics sectors. Internal base resistors are specified at R1 = 1 kOhm and R2 = 1 kOhm. The maximum power dissipation is 700 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 700 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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