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PBRN113EK,115

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PBRN113EK,115

TRANS PREBIAS NPN 40V 0.6A SMT3

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PBRN113EK-115 is a pre-biased NPN bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It is specified with a minimum DC current gain (hFE) of 180 at 300mA and 5V. Internal base resistors (R1 and R2) are both 1 kOhm. The device has a maximum power dissipation of 250mW and is supplied in a Tape & Reel (TR) package, specifically the SMT3; MPAK (TO-236-3, SC-59, SOT-23-3) form factor. This transistor is commonly utilized in industrial automation and consumer electronics for switching and amplification tasks.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 300mA, 5V
Supplier Device PackageSMT3; MPAK
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max250 mW
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms

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