SI4420DY,518
MOSFET N-CH 30V SOT96-1Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number SI4420DY-518. This device features a 30V drain-to-source voltage and a continuous drain current capability of 12.5A at 25°C (Tj). The Rds(on) is specified at a maximum of 9mOhms at 12.5A and 10V Vgs. With a gate charge of 120 nC at 10V, it is suitable for applications requiring efficient switching. The component is housed in an 8-SOIC package and supports surface mounting. Operating temperature range is -55°C to 150°C. Power dissipation is rated at 2.5W (Ta). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tj) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
