SI4410DY,518
MOSFET N-CH 30V 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number SI4410DY-518, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tj). This surface-mount device features a maximum on-resistance of 13.5mOhm at 10A and 10V Vgs. The gate charge is specified at 34 nC maximum at 5V Vgs. With a power dissipation of 2.5W (Ta), it is suitable for applications operating within a temperature range of -55°C to 150°C (TJ). The SI4410DY-518 is housed in an 8-SOIC package and is supplied on tape and reel. This component is utilized in automotive and industrial applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tj) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
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