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SI4410DY,518

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SI4410DY,518

MOSFET N-CH 30V 8SO

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number SI4410DY-518, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tj). This surface-mount device features a maximum on-resistance of 13.5mOhm at 10A and 10V Vgs. The gate charge is specified at 34 nC maximum at 5V Vgs. With a power dissipation of 2.5W (Ta), it is suitable for applications operating within a temperature range of -55°C to 150°C (TJ). The SI4410DY-518 is housed in an 8-SOIC package and is supplied on tape and reel. This component is utilized in automotive and industrial applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tj)
Rds On (Max) @ Id, Vgs13.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 5 V

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