PSMN9R0-30YL,115
MOSFET N-CH 30V 61A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN9R0-30YL-115 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 61A at 25°C (Tc). The low on-resistance of 8mOhm at 15A and 10V Vgs makes it suitable for demanding power management tasks. It is housed in the compact LFPAK56 (Power-SO8, SC-100, SOT-669) surface mount package, optimized for thermal performance with a maximum power dissipation of 46W (Tc). Key electrical characteristics include a gate charge (Qg) of 17.8 nC at 10V and input capacitance (Ciss) of 1006 pF at 12V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is commonly utilized in automotive, industrial power supplies, and high-power DC-DC converters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1006 pF @ 12 V |
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