PSMN9R0-30LL,115
MOSFET N-CH 30V 21A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP PSMN9R0-30LL-115 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 21A at 25°C (Tc). With a low on-resistance of 9mOhm maximum at 5A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a compact 8-DFN3333 (3.3x3.3) surface-mount package, facilitating dense board layouts. Key electrical parameters include a gate charge of 20.6 nC (max) at 10V Vgs and an input capacitance of 1193 pF (max) at 15V Vds. It supports a wide operating temperature range from -55°C to 150°C (TJ) and can dissipate up to 50W (Tc). This device is commonly employed in automotive, consumer electronics, and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1193 pF @ 15 V |
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