PSMN9R0-25YLC,115
MOSFET N-CH 25V 46A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PSMN9R0-25YLC-115, an N-Channel MOSFET designed for demanding applications. This component features a 25 V drain-source voltage and a continuous drain current capability of 46 A at 25°C. With a low on-resistance of 9.1 mOhm at 15 A and 10 V, it minimizes conduction losses. The device is housed in a compact LFPAK56, Power-SO8 package, facilitating efficient thermal management with a maximum power dissipation of 34 W. Key electrical characteristics include a gate charge of 12 nC at 10 V and input capacitance of 694 pF at 12 V. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 694 pF @ 12 V |