PSMN8R5-108ESQ
MOSFET N-CH 108V 100A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. N-Channel Power MOSFET, part number PSMN8R5-108ESQ, offers a 108V drain-source voltage and 100A continuous drain current at 25°C (Tj). This device features a low on-resistance of 8.5mOhm maximum at 25A and 10V. Designed for high-power applications, it dissipates up to 263W at 25°C (Tc). The MOSFET is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package, suitable for through-hole mounting. Key parameters include a gate charge of 111 nC at 10V and input capacitance of 5512 pF at 50V. Operating temperature ranges from -55°C to 175°C (TJ). This component is utilized in demanding sectors such as industrial power supplies and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 108 V |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
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