PSMN8R5-100XSQ
MOSFET N-CH 100V 49A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PSMN8R5-100XSQ, a high-performance N-Channel MOSFET designed for demanding applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 49A at 25°C (Tj). With a low on-resistance (Rds On) of 8.5mOhm at 10A and 10V, it minimizes conduction losses. The PSMN8R5-100XSQ offers a maximum power dissipation of 55W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 100 nC @ 10 V and input capacitance (Ciss) of 5512 pF @ 50 V. This MOSFET is housed in a TO-220F package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it well-suited for use in power supply, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
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