PSMN8R0-30YLC,115
MOSFET N-CH 30V 54A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN8R0-30YLC-115 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 54A at 25°C. With a maximum on-resistance (Rds On) of 7.9mOhm at 15A and 10V, it offers low conduction losses. The MOSFET is packaged in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) surface-mount configuration, enabling high power density. Its thermal performance is characterized by a maximum power dissipation of 42W (Tc) and an operating temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 848 pF at 15V. This component is suitable for use in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 848 pF @ 15 V |