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PSMN8R0-30YL,115

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PSMN8R0-30YL,115

MOSFET N-CH 30V 62A LFPAK56

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ PSMN8R0-30YL-115 is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 62 A at 25°C, with a maximum power dissipation of 56 W. The low on-resistance of 8.3 mOhm at 15 A and 10 V Vgs, coupled with a gate charge of 18.3 nC, ensures efficient switching. It utilizes a surface mount LFPAK56, Power-SO8 package (SC-100, SOT-669) for optimal thermal management, operating across a temperature range of -55°C to 175°C. Drive voltages are specified from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. This component is suitable for use in automotive and industrial power electronics.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)56W (Tc)
Vgs(th) (Max) @ Id2.15V @ 1mA
Supplier Device PackageLFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1005 pF @ 15 V

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