PSMN8R0-30YL,115
MOSFET N-CH 30V 62A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PSMN8R0-30YL-115 is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 62 A at 25°C, with a maximum power dissipation of 56 W. The low on-resistance of 8.3 mOhm at 15 A and 10 V Vgs, coupled with a gate charge of 18.3 nC, ensures efficient switching. It utilizes a surface mount LFPAK56, Power-SO8 package (SC-100, SOT-669) for optimal thermal management, operating across a temperature range of -55°C to 175°C. Drive voltages are specified from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. This component is suitable for use in automotive and industrial power electronics.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1005 pF @ 15 V |