PSMN7R6-60XSQ
MOSFET N-CH 60V 51.5A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN7R6-60XSQ is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 51.5A at 25°C (Tc), with a maximum power dissipation of 46W (Tc). The device exhibits a low on-resistance (Rds On) of 7.8mOhm at 25A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 38.7 nC at 10V and input capacitance (Ciss) of 2651 pF at 30V. The TO-220F isolated package facilitates through-hole mounting. This MOSFET is suitable for power conversion, motor control, and industrial applications. Operating temperature ranges from -55°C to 175°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2651 pF @ 30 V |
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