PSMN7R0-40LS,115
MOSFET N-CH 40V 40A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. offers the PSMN7R0-40LS-115, an N-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 40A at 25°C (Tc). With a low on-resistance of 7mOhm at 10A and 10V, it minimizes conduction losses. The MOSFET is housed in a compact 8-DFN3333 (3.3x3.3) surface mount package with an exposed pad for enhanced thermal performance, allowing for a maximum power dissipation of 65W (Tc). Key electrical characteristics include a gate charge (Qg) of 21.4 nC at 10V and input capacitance (Ciss) of 1286 pF at 12V. This device is suitable for use in power management, automotive, and industrial automation sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1286 pF @ 12 V |
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