PSMN7R0-100XS,127
MOSFET N-CH 100V 55A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PSMN7R0-100XS-127, a high-performance N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 55A at 25°C, with a maximum power dissipation of 57.7W (Tc). The device offers a low on-resistance (Rds On) of 6.8mOhm at 15A and 10V gate drive. Key characteristics include a gate charge (Qg) of 121 nC at 10V and input capacitance (Ciss) of 6686 pF at 50V. The PSMN7R0-100XS-127 is housed in a TO-220F package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply applications, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6686 pF @ 50 V |