PSMN7R0-100ES,127
MOSFET N-CH 100V I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN7R0-100ES-127, a high-performance N-channel MOSFET, is designed for demanding power applications. This electronic component features a robust I2PAK package for efficient thermal management and reliable mounting. With a drain-source voltage (Vds) of 100V and a continuous drain current (Id) capability, it excels in power converter designs, motor control systems, and automotive electronics. The PSMN7R0-100ES-127 offers low on-resistance, ensuring minimal power loss and maximizing system efficiency. Its advanced silicon technology provides excellent switching characteristics, making it suitable for high-frequency switching applications. This MOSFET is a critical component for engineers developing next-generation power solutions across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
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