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PSMN5R9-30YL,115

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PSMN5R9-30YL,115

MOSFET N-CH 30V 78A LFPAK56

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

This NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PSMN5R9-30YL-115, offers robust performance in a compact LFPAK56 (Power-SO8) package. It features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 78A at 25°C (Tc), with a maximum power dissipation of 63W (Tc). The device exhibits a low on-resistance (Rds On) of 6.1mOhm at 20A and 10V Vgs, supported by a gate-source threshold voltage (Vgs(th)) of 2.15V at 1mA. Key parameters include a gate charge (Qg) of 21.3 nC at 10V Vgs and input capacitance (Ciss) of 1226 pF at 15V Vds. Designed for surface mounting, this component operates across a wide temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging and is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-100, SOT-669
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Rds On (Max) @ Id, Vgs6.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)63W (Tc)
Vgs(th) (Max) @ Id2.15V @ 1mA
Supplier Device PackageLFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1226 pF @ 15 V

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