PSMN5R9-30YL,115
MOSFET N-CH 30V 78A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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This NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PSMN5R9-30YL-115, offers robust performance in a compact LFPAK56 (Power-SO8) package. It features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 78A at 25°C (Tc), with a maximum power dissipation of 63W (Tc). The device exhibits a low on-resistance (Rds On) of 6.1mOhm at 20A and 10V Vgs, supported by a gate-source threshold voltage (Vgs(th)) of 2.15V at 1mA. Key parameters include a gate charge (Qg) of 21.3 nC at 10V Vgs and input capacitance (Ciss) of 1226 pF at 15V Vds. Designed for surface mounting, this component operates across a wide temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging and is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1226 pF @ 15 V |