PSMN5R0-100XS,127
MOSFET N-CH 100V 67.5A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. N-Channel Power MOSFET, PSMN5R0-100XS-127, offers a 100V drain-source voltage and a continuous drain current of 67.5A at 25°C (Tc). This MOSFET features a low on-resistance of 5mOhm maximum at 15A and 10V Vgs. The device is packaged in a TO-220F (TO-220-3 Full Pack, Isolated Tab) for through-hole mounting. With a maximum power dissipation of 63.8W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge of 153 nC typical at 10V Vgs and input capacitance of 9900 pF maximum at 50V Vds. This component is commonly utilized in industrial, automotive, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 50 V |