PSMN4R6-100XS,127
MOSFET N-CH 100V 70.4A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. N-Channel MOSFET, part number PSMN4R6-100XS-127, offers a 100V drain-to-source voltage with a continuous drain current of 70.4A at 25°C. This device features a low on-resistance of 4.6mOhm at 15A and 10V, with a gate charge of 153nC at 10V. The input capacitance (Ciss) is a maximum of 9900pF at 50V. Designed for through-hole mounting in a TO-220F isolated tab package, it has a maximum power dissipation of 63.8W. Operating temperature range is -55°C to 175°C. This MOSFET technology is suitable for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 50 V |
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