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PSMN3R9-60XSQ

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PSMN3R9-60XSQ

MOSFET N-CH 60V 75A TO220F

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. PSMN3R9-60XSQ is a 60V N-Channel MOSFET designed for demanding power applications. This component features a low on-resistance of 4mOhm maximum at 25A and 10V Vgs, facilitating high efficiency. With a continuous drain current rating of 75A at 25°C and a maximum power dissipation of 55W, it is suitable for robust power switching. The device is housed in a TO-220F package with isolated tab, enabling efficient thermal management in through-hole mounting configurations. Key electrical parameters include a gate charge of 103 nC at 10V and input capacitance of 5494 pF at 25V. Operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power control systems where high current handling and low conduction losses are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)55W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5494 pF @ 25 V

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