PSMN3R9-60XSQ
MOSFET N-CH 60V 75A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN3R9-60XSQ is a 60V N-Channel MOSFET designed for demanding power applications. This component features a low on-resistance of 4mOhm maximum at 25A and 10V Vgs, facilitating high efficiency. With a continuous drain current rating of 75A at 25°C and a maximum power dissipation of 55W, it is suitable for robust power switching. The device is housed in a TO-220F package with isolated tab, enabling efficient thermal management in through-hole mounting configurations. Key electrical parameters include a gate charge of 103 nC at 10V and input capacitance of 5494 pF at 25V. Operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power control systems where high current handling and low conduction losses are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5494 pF @ 25 V |
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