PSMN3R8-30LL,115
MOSFET N-CH 30V 40A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN3R8-30LL-115 is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 3.7mOhm at 10A and 10V Vgs, enabling minimal conduction losses. With a continuous drain current capability of 40A (Tc) and a maximum power dissipation of 69W (Tc), it is suitable for demanding power management tasks. The device is housed in a compact 8-DFN3333 (3.3x3.3) surface-mount package, optimized for thermal performance with an exposed pad. Key electrical characteristics include a gate charge of 38 nC at 10V and input capacitance of 2085 pF at 15V Vds. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 15 V |
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