PSMN3R7-25YLC,115
MOSFET N-CH 25V 97A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. N-Channel MOSFET, PSMN3R7-25YLC-115, offers a 25V drain-source voltage and 97A continuous drain current at 25°C. This device features a low Rds(on) of 3.9mOhm at 20A and 10V Vgs, with a gate charge of 21.6 nC at 10V Vgs and input capacitance of 1585 pF at 12V Vds. The NXP PSMN3R7-25YLC-115 is housed in a surface mount LFPAK56, Power-SO8 (SC-100, SOT-669) package, providing 64W of power dissipation. Operating temperature ranges from -55°C to 175°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 12 V |