PSMN3R4-30BL,118
NOW NEXPERIA PSMN3R4-30BL - 100AManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. PSMN3R4-30BL-118 is an N-Channel MOSFET designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 100A at 25°C. The Rds On is specified at a maximum of 3.3mOhm at 25A and 10V. With a maximum power dissipation of 114W (Tc), it is suitable for demanding thermal environments. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package. Key parameters include a Gate Charge (Qg) of 64 nC @ 10 V and an Input Capacitance (Ciss) of 3907 pF @ 15 V. This MOSFET is utilized in sectors such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3907 pF @ 15 V |
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