PSMN3R2-25YLC,115
MOSFET N-CH 25V 100A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN3R2-25YLC-115 is a surface mount N-Channel MOSFET designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 79W (Tc). The low on-resistance (Rds On) is 3.4mOhm at 25A, 10V, achievable with a gate drive voltage range of 4.5V to 10V. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1781 pF at 12V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a LFPAK56, Power-SO8 package (SC-100, SOT-669) supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1781 pF @ 12 V |