NXP USA Inc. PSMN2R9-25YLC-GFX is a N-channel MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 2.9 mO at a VGS of 10V, enabling reduced conduction losses. With a continuous drain current capability of 75A and a drain-source voltage of 25V, it is well-suited for demanding power management tasks. The device utilizes advanced trench technology for optimal performance. Its robust construction and reliable operation make it a valuable selection for automotive, industrial, and consumer electronics power supply designs. The PSMN2R9-25YLC-GFX is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk