PSMN2R2-30YLC/GFX
PSMN2R2-30YLC/GFXManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PSMN2R2-30YLC-GFX is a high-performance N-channel MOSFET designed for demanding power applications. This component offers a low on-state resistance (RDS(on)) of 2.2 mO at a VGS of 10V and a drain current of 25A, ensuring minimal power loss and efficient operation. With a continuous drain current capability of 25A and a pulsed drain current of 100A, it can handle significant current surges. The device features a drain-source voltage (VDS) rating of 30V, making it suitable for low-voltage power management systems. Its robust avalanche capability and high thermal performance are critical for reliability in automotive, industrial, and consumer electronics where efficient power conversion and robust operation are paramount. The PSMN2R2-30YLC-GFX is supplied in bulk packaging for high-volume manufacturing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
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