PSMN1R7-25YLC,115
MOSFET N-CH 25V 100A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN1R7-25YLC-115 is an N-channel MOSFET designed for high-efficiency power switching applications. This component features a 25V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 164W (Tc). The low on-resistance is specified at 1.9mOhm at 25A and 10V. Operating with a gate drive voltage range of 4.5V to 10V, it exhibits a maximum gate charge of 59 nC and input capacitance of 3735 pF. The device is packaged in a surface-mount LFPAK56 (Power-SO8) configuration, suitable for demanding thermal management. Its robust construction allows operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial motor control, and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 164W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3735 pF @ 12 V |