PSMN1R6-30PL,127
MOSFET N-CH 30V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN1R6-30PL-127 is a high-performance N-channel MOSFET designed for demanding power applications. This component features a low on-state resistance (RDS(on)) of 1.6 mO at a drain-source voltage (VDS) of 10V and a continuous drain current (ID) of 100A. With a drain-source breakdown voltage (VDS(on)) of 30V, it offers robust voltage handling capabilities. The device is packaged in a standard TO220AB package, facilitating ease of integration into existing designs. Its efficient switching characteristics and thermal performance make it suitable for use in automotive, industrial power supplies, and electric vehicle charging systems. The PSMN1R6-30PL-127 is engineered for reliable operation in power conversion and motor control applications where efficiency and power density are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
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