PSMN1R5-40ES,127
MOSFET N-CH 40V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN1R5-40ES-127 is a high-performance N-channel MOSFET designed for demanding power applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 120A, housed in an I2PAK package for efficient thermal management and robust mounting. Its low on-state resistance (Rds(on)) of 1.5 milliohms at Vgs=10V ensures minimal power loss, contributing to overall system efficiency. This MOSFET is an ideal choice for power switching, motor control, and power distribution circuits across various industries including automotive, industrial automation, and renewable energy systems. The PSMN1R5-40ES-127 is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
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