PSMN1R1-30EL,127
MOSFET N-CH 30V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN1R1-30EL-127 is a high-performance N-channel MOSFET designed for demanding automotive and industrial applications. This device features a low on-resistance of 1.1 mO at a 10V gate-source voltage and a continuous drain current rating of 120A, making it suitable for power switching and motor control functions. The 30V drain-source breakdown voltage provides ample headroom for many automotive electrical systems. Encapsulated in an I2PAK package, it offers excellent thermal performance and robust mechanical integrity. This MOSFET is engineered to meet the stringent reliability and efficiency requirements of modern automotive powertrain, chassis, and body control modules, as well as industrial power supplies and motor drives. Its low Rds(on) minimizes conduction losses, contributing to improved system efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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