PSMN0R9-25YLC/GFX
PSMN0R9-25YLC/GFXManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN0R9-25YLC-GFX. This high-performance N-channel MOSFET is engineered for demanding power applications. It features a low R_DS(on) of 0.9mO at V_GS = 10V, ensuring minimal conduction losses and high efficiency. The device boasts a continuous drain current of 150A and a pulsed drain current of 600A, making it suitable for high-power switching and motor control circuits. Operating with a V_DS of 25V, this MOSFET offers robust voltage handling capabilities. Its advanced silicon technology and optimized packaging contribute to excellent thermal performance, critical for reliability in power electronics. Ideal for use in automotive systems, industrial power supplies, and electric vehicle powertrains. Packaged in Bulk.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
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