PSMN050-80PS,127
MOSFET N-CH 80V 22A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN050-80PS-127 is an 80V N-Channel MOSFET in a TO-220AB package. This device offers a continuous drain current of 22A at 25°C (Tc) and a maximum power dissipation of 56W (Tc). Key electrical characteristics include a maximum Rds(on) of 51mOhm at 10A and 10V, and a gate charge (Qg) of 11 nC at 10V. The input capacitance (Ciss) is rated at 633 pF maximum at 12V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 12 V |
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