PSMN040-200W,127
MOSFET N-CH 200V 50A TO247-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PSMN040-200W-127 is a 200V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current capability of 50A at 25°C and a maximum power dissipation of 300W at the same temperature. The on-resistance (Rds On) is specified at a maximum of 40mOhm when driven at 25A and 10V gate-source voltage. The device is housed in a TO-247-3 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge of 183 nC at 10V and input capacitance of 9530 pF at 25V drain-source voltage. Operating temperature range is from -55°C to 175°C. This MOSFET is utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9530 pF @ 25 V |
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