PSMN035-100LS,115
MOSFET N-CH 100V 27A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN035-100LS-115 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 27A at 25°C (Tc). The low on-resistance (Rds On) of 32mOhm at 10A, 10V ensures minimal conduction losses, further supported by a maximum power dissipation of 65W (Tc). The device is housed in a compact 8-DFN3333 (3.3x3.3) surface mount package, suitable for space-constrained designs. Key electrical characteristics include a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 1350 pF at 50V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in various industries including automotive, industrial automation, and consumer electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 50 V |
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