PSMN023-80LS,115
MOSFET N-CH 80V 34A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PSMN023-80LS-115 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) capability of 34A at 25°C (Tc). With a maximum on-resistance (Rds On) of 23mOhm at 10A and 10V gate drive, it offers low conduction losses. The device is packaged in an 8-DFN3333 (3.3x3.3) surface mount package, suitable for high-density board designs. Key parameters include a gate charge (Qg) of 21 nC (max) at 10V and input capacitance (Ciss) of 1295 pF (max) at 40V. The MOSFET operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 65W (Tc). This component is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1295 pF @ 40 V |
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