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PSMN023-80LS,115

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PSMN023-80LS,115

MOSFET N-CH 80V 34A 8DFN

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The NXP USA Inc. PSMN023-80LS-115 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) capability of 34A at 25°C (Tc). With a maximum on-resistance (Rds On) of 23mOhm at 10A and 10V gate drive, it offers low conduction losses. The device is packaged in an 8-DFN3333 (3.3x3.3) surface mount package, suitable for high-density board designs. Key parameters include a gate charge (Qg) of 21 nC (max) at 10V and input capacitance (Ciss) of 1295 pF (max) at 40V. The MOSFET operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 65W (Tc). This component is commonly utilized in automotive, industrial, and consumer electronics power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device Package8-DFN3333 (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1295 pF @ 40 V

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