PSMN023-40YLCX
MOSFET N-CH 40V 24A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN023-40YLCX is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage and a continuous drain current capability of 24A at 25°C (Tc). The low on-resistance, specified at a maximum of 23mOhm at 5A and 10Vgs, contributes to efficient operation. The MOSFET is housed in an LFPAK56, Power-SO8 package, suitable for surface mounting. Key electrical characteristics include a gate charge of 8.4 nC (max) at 10Vgs and an input capacitance of 520 pF (max) at 20Vds. It offers a power dissipation of 25W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). This component is commonly found in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 20 V |
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