PSMN017-30LL,115
MOSFET N-CH 30V 15A 8DFNManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PSMN017-30LL-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 17 mOhm at 5 A and 10 Vgs. The device offers a maximum power dissipation of 37 W (Tc) and is packaged in an 8-DFN3333 (3.3x3.3) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 10 nC at 10 V and input capacitance (Ciss) of 526 pF at 15 V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in industries such as automotive, industrial, and consumer electronics for power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 15 V |
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